Structure, defects, and strain in silicon-silicon oxide interfaces

Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

Defects in silicon nanowires

Defects in silicon nanowires have been investigated using the electron spin resonance ESR method. The ESR signals consist of three features: a strong resonance at g=2.002 49, a weak line at g=2.000 48, and a broad feature at g=2.005 41. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and th...

Defects in silicon

The method of obtaining pure polycrystalline silicon is described, followed by short accounts of how this material is converted into single-crystal form either by the Czochralski (cz) pulling method or the float-zone (FZ) method. It is shown that the silicon contains various impurities including oxygen, carbon, boron and possibly hydrogen. If a silicon nitride crucible is used instead of silica...

Silicon Nanowires and Silicon/molecular Interfaces for Nanoscale Electronics

of the thesis The thesis describes the realization of high-performance silicon nanowire (Si NW) logic circuits and a novel surface modification technique for nanoscale electronics applications. First, doped Si NWs were generated via the superlattice nanowire pattern transfer (SNAP) process, forming aligned, uniform, ultra-dense NW arrays. The NWs served as the channel material for field-effect ...

Silicon particle pinhole defects in aluminium–silicon alloys

It was recently shown that silicon particles in heat-treated Al–Si casting alloys can contain flaws such as surface pinholes and grooves, which cause varying degrees of reduction in the in situ particle fracture strength and hence influence the mechanical properties of this class of alloys. In this work, we show that the formation of one class of such strength-limiting flaws in solidified and c...